dc.contributor.advisor | O'Leary, Stephen | |
dc.contributor.author | Orapunt, Farida | |
dc.date.accessioned | 2012-11-23T21:38:24Z | |
dc.date.available | 2012-11-23T21:38:24Z | |
dc.date.issued | 2012-04 | |
dc.identifier.uri | http://hdl.handle.net/10294/3648 | |
dc.description | A Thesis Submitted to the Faculty of Graduate Studies and Research in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy in Engineering, University of Regina, xlii, 211 l. | en_US |
dc.description.abstract | In this thesis, a quantitative analysis of the optical response of an amorphous
semiconductor is presented. The entire analysis is cast within the framework of
an empirical model for the valence band and conduction band density of states
functions, that captures the basic features expected of these functions. A novel
aspect of this analysis is the introduction of the density of localized valence band
and conduction band electronic states and the establishment of a means of evaluating
these densities from knowledge of the density of states functions coupled with
the locations of the valence band and conduction band mobility edges. The determination
of the contributions to the joint density of states function attributable
to the various types of optical transitions, as a function of the location of these
mobility edges, is another novel feature of this analysis. This formalism is then
applied in order to determine the spectral dependence of the normalized dipole
matrix element squared average corresponding to such a semiconductor. A means
of determining the spectral dependence of the optical absorption coefficient is also
provided. Finally, this formalism is applied to the specific case of plasma enhanced
chemical vapor deposition deposited hydrogenated amorphous silicon, this being
the most widely used amorphous semiconductor at present. It is found that the
mobility gap value suggested by Jackson et al. [Physical Review B, vol. 31, pp.
5187-5198, 1985] is discordant with the experimentally measured optical response.
It is also found that the effective masses associated with the electrons and holes
within plasma enhanced chemical vapor deposition are greater than those that occur in crystalline silicon. The prospects for future work in this field, that builds
upon the results presented herein, are commented upon. | en_US |
dc.description.uri | A Thesis Submitted to the Faculty of Graduate Studies and Research In Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy *, University of Regina. *, * p. | en |
dc.language.iso | en | en_US |
dc.publisher | Faculty of Graduate Studies and Research, University of Regina | en_US |
dc.subject.lcsh | Amorphous semiconductors--Optical properties | |
dc.title | Optical Transitions in Amorphous Semiconductors | en_US |
dc.type | Thesis | en |
dc.description.authorstatus | Student | en |
dc.description.peerreview | yes | en |
thesis.degree.name | Doctor of Philosophy (PhD) | en_US |
thesis.degree.level | Doctoral | en |
thesis.degree.grantor | University of Regina | en |
thesis.degree.department | Faculty of Engineering and Applied Science | en_US |
dc.contributor.committeemember | Benedicenti, Luigi | |
dc.contributor.committeemember | Laforge, Paul | |
dc.contributor.committeemember | Palmer, Ron | |
dc.contributor.committeemember | Huber, Garth | |
dc.contributor.externalexaminer | Sabarinathan, Javshri | |
dc.identifier.tcnumber | TC-SRU-3648 | |
dc.identifier.thesisurl | http://ourspace.uregina.ca/bitstream/handle/10294/3648/Orapunt_Farida_200218197_PhD_ENGG_Fall2012.pdf | |